******************************************************************************************** * * * ################################################# * * # # * * # MTP75N05HD BY MOTOROLA # * * # # * * # MODEL DEVELOPED BY # * * # ALLIANCE TECHNOLOGIES # * * # 10510 RESEARCH RD SE # * * # ALBUQUERQUE NM 87123 # * * # (505) 299-9591 # * * # 11-11-92 J. DULIERE # * * # # * * ################################################# * * * ******************************************************************************************** * * THE MODEL FOR THIS DEVICE IS A SUBCIRCUIT AND CAN BE USED IN THE FOLLOWING FORMAT * IN ANY CIRCUIT SIMULATION: * X Nodes Model_Name * where X is the circuit specific name * Nodes are 3 for this device, the first is the drain, the second is the gate, and the third * is the source. * Model_Name is MTP75N05X WHERE 'X' IS EITHER C, P, OR G FOR SPICE 3C.1 - 3E.2, PSPICE, * AND SPICE 2G.6 RESPECTIVELY * Example: X1 10 20 30 MTP75N05C IS USED WITH SPICE 3C.1 COMPATIBALE SIMULATORS * .SUBCKT MTP75N05C 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN ******************************************************************************************** * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 0.0015 RD RD2 4 5 0.0015 RD RS 3 9 0.0030 RS RG 1 8 4 LD 5 10 4.5E-09 LG 8 20 7.5E-09 LS 9 30 7.5E-09 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 0.0026 RDIO *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E05 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 2.5E-09 RCGD 4 7 1E05 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W=6.69 L=1E-6 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 5.5E15 VTO = 3.84 PHI = 0.6 + UO = 335.02 KAPPA = 2.527498E-3 ETA = 3E-3 + THETA = 0.01 NFS = 1E12 ) .MODEL DDS1 D ( IS = 7.509945E-12 + N = 1.0332478 BV = 99.276 IBV = 0.01 + EG = 1.11 XTI = 4.2125 TT = 92E-9 + CJO = 4.102016E-9 VJ = 1.0014842 M = 0.5098408 + FC = 0.5 ) .MODEL DGD D ( CJO = 2.43E-9 + VJ = 1.814 M = 0.884 FC = 0.5 ) .MODEL RD R ( TC1 = 8.73251E-3 TC2 = 7.34669E-6 ) .MODEL RS R ( TC1 = -5.5296E-3 TC2 = 6.92632E-3 ) .MODEL RDIO R ( TC1 = 3.16840E-3 TC2 = 3.17472E-6 ) .ENDS ******************************************************************************************** ******************************************************************************************** .SUBCKT MTP75N05P 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN ******************************************************************************************** * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 RD 0.0015 RD2 4 5 RD 0.0015 RS 3 9 RS 0.0030 RG 1 8 4 LD 5 10 4.5E-09 LG 8 20 7.5E-09 LS 9 30 7.5E-09 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 RDIO 0.0026 *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E05 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 2.5E-09 RCGD 4 7 1E05 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W=6.69 L=1E-6 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 5.5E15 VTO = 3.84 PHI = 0.6 + UO = 335.02 KAPPA = 2.527498E-3 ETA = 3E-3 + THETA = 0.01 NFS = 1E12 ) .MODEL DDS1 D ( IS = 7.509945E-12 + N = 1.0332478 BV = 99.276 IBV = 0.01 + EG = 1.11 XTI = 4.2125 TT = 92E-9 + CJO = 4.102016E-9 VJ = 1.0014842 M = 0.5098408 + FC = 0.5 ) .MODEL DGD D ( CJO = 2.43E-9 + VJ = 1.814 M = 0.884 FC = 0.5 ) .MODEL RD RES ( TC1 = 8.73251E-3 TC2 = 7.34669E-6 ) .MODEL RS RES ( TC1 = -5.5296E-3 TC2 = 6.92632E-3 ) .MODEL RDIO RES ( TC1 = 3.16840E-3 TC2 = 3.17472E-6 ) .ENDS ******************************************************************************************** ******************************************************************************************** .SUBCKT MTP75N05G 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 0.0015 TC= 8.73251E-3,7.34669E-6 RD2 4 5 0.0015 TC= 8.73251E-3,7.34669E-6 RS 3 9 0.0030 TC= -5.5296E-3,6.92632E-3 RG 1 8 4 LD 5 10 4.5E-09 LG 8 20 7.5E-09 LS 9 30 7.5E-09 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 0.0026 TC=3.16840E-3,3.17472E-6 *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E05 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 2.5E-09 RCGD 4 7 1E05 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W=6.69 L=1E-6 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 5.5E15 VTO = 3.84 PHI = 0.6 + UO = 335.02 KAPPA = 2.527498E-3 ETA = 3E-3 + THETA = 0.01 NFS = 1E12 ) .MODEL DDS1 D ( IS = 7.509945E-12 + N = 1.0332478 BV = 99.276 IBV = 0.01 + EG = 1.11 XTI = 4.2125 TT = 92E-9 + CJO = 4.102016E-9 VJ = 1.0014842 M = 0.5098408 + FC = 0.5 ) .MODEL DGD D ( CJO = 2.43E-9 + VJ = 1.814 M = 0.884 FC = 0.5 ) .ENDS