******************************************************************************* * * * * * * * ############################################################# * * # # * * # MTP3N100E # * * # # * * # Motorola TMOS Power FET # * * # 3 AMPERES # * * # 1000 VOLTS # * * # RDS(on) = 4 OHMS # * * # Package = TO-220AB # * * # # * * # This model was developed by # * * # Analogy, Inc. # * * # 9205 SW Gemini Dr. # * * # Beaverton, OR 97005 # * * # Copyright 1994 Analogy, Inc. # * * # All Rights Reserved # * * # # * * # The content of this model is subject to change # * * # without notice and may not be modified or altered # * * # without permission from Motorola, Inc. This model # * * # has been carefully checked and is believed to be # * * # accurate, however neither Analogy nor Motorola # * * # assume liability for the use of this model or the # * * # results obtained from using it. # * * # # * * # For more information regarding modeling services, # * * # model libraries or simulation products, please # * * # contact Analogy, Inc. (503) 626-9700. # * * # # * * ############################################################# * * * * * * * ******************************************************************************* * There are four simulation models provided on this disk for the MTP3N100E * power mosfet. Three of the models are for use with SPICE based simulators * and the fourth model is for use with the SABER(TM) simulator from Analogy. * * The three SPICE models have identical parameter values and model structure * however the syntax is slightly modified in each model to support a variety * of SPICE simulators. The SPICE model is based on the available elements * in SPICE based electrical simulators and may have limited accuracy and * convergence capabilities due to fundamental limitations in SPICE based * simulators. Specifically, this model DOES NOT produce an accurate prediction * of some non-linear capacitance effects, non-linear leakage characteristics, * soft-knee breakdown, weak inversion characteristics, body diode forward and * reverse recovery mechanisms, and maximum device ratings. * * The SABER model is a more accurate model that includes all non-linear * capacitances, non-linear leakage characteristics, soft-knee breakdown, weak * inversion characteristics, body diode forward and reverse recovery mechanisms, * and maximum stress ratings. The model is available for use with the SABER(tm) * simulator from Analogy and is written in MAST(tm), an Analog Hardware * Description Language (AHDL). The SABER model is well suited for power circuit * simulation. ******************************************************************************** * ******************************************************************************** * * The model for this device is a subcircuit and can be used in the one of the * following formats in any spice compatible simulator. * * This model file contains 3 subcircuits with correct syntax for SPICE2G.6, * SPICE3C/D.X, HSPICE(tm) and PSPICE(tm). The user must call the proper subcircuit * in their netlist depending on the simulator they are using, e.g.: * * X Nodes Model_Name * * where X is the circuit specific name, Nodes are the * connection points for the device and Model_Name is the name of the model * provided in this model file. * * There are 3 nodes for this device. * The first is the Drain, the second is the Gate, and the third is the Source. * The Model_Name is: mtp3n100eG for Berkley 2G.6 and compatible simulators. * mtp3n100eD for Berkley 3C.X, 3D.X and HSPICE(tm) simulators. * mtp3n100eP for Microsim PSPICE(tm) simulator. * Example: X1 1 2 3 mtp3n100eX * ******* BERKLEY 2G.6 AND COMPATIBLE SIMULATORS ***************************** ************************** INSTANTIATION ********************************** .subckt mtp3n100eG 10 20 30 * * 10 = Drain 20 = Gate 30 = Source * ****************************************************************************** * *------------------------ EXTERNAL PARASITICS -------------------------------- * PACKAGE INDUCTANCE * LDRAIN 10 11 1e-09 LGATE 20 21 1e-09 LSOURCE 30 31 1e-09 * * RESISTANCES * RDRAIN1 4 11 3.4 TC=0.008115,1.948e-05 RDRAIN2 4 5 0.01 TC=0.008115,1.948e-05 RSOURCE 31 6 0.01508 TC=0,0 RDBODY 8 30 0.01 TC=0,0 * RGATE 21 2 1 * *-------------------------------------------------------------------------- * *--------------- CAPACITANCES AND BODY DIODE ------------------------------ * DBODY 8 11 DBODY DGD 3 11 DGD CGDMAX 2 3 2.8e-09 RGDMAX 2 3 1e+08 CGS 2 6 1.188e-09 * *-------------------------------------------------------------------------- * *----------------------- CORE MOSFET -------------------------------------- * M1 5 2 6 6 MAIN * *-------------------------------------------------------------------------- * .MODEL MAIN NMOS ( +LEVEL = 3 +VTO = 3.8 +KP = 8 +GAMMA = 3 +PHI = 0.6 +LAMBDA = 0.0009889 +RD = 0 +RS = 0 +CBD = 0 +CBS = 0 +IS = 1e-14 +PB = 0.8 +CGSO = 0 +CGDO = 0 +CGBO = 0 +RSH = 0 +CJ = 0 +MJ = 0.5 +CJSW = 0 +MJSW = 0.33 +JS = 1e-14 +TOX = 1e-07 +NSUB = 1e+15 +NSS = 0 +NFS = 6.886e+11 +TPG = 1 +XJ = 0 +LD = 0 +UO = 600 +UCRIT = 10000 +UEXP = 0 +UTRA = 0 +VMAX = 1e+06 +NEFF = 1 +KF = 0 +AF = 1 +FC = 0.5 +DELTA = 0 +THETA = 0 +ETA = 0 +KAPPA = 0.2) * *-------------------------------------------------------------------------- * .MODEL DGD D ( +IS = 1e-15 +RS = 0 +N = 1000 +TT = 0 +CJO = 1.109e-09 +VJ = 1.55 +M = 0.9227 +EG = 1.11 +XTI = 3 +KF = 0 +AF = 1 +FC = 0.5 +BV = 10000 +IBV = 0.001) * *-------------------------------------------------------------------------- * .MODEL DBODY D ( +IS = 2.15e-10 +RS = 0.00743 +N = 1.23 +TT = 2.011e-07 +CJO = 5.809e-10 +VJ = 1.425 +M = 0.5887 +EG = 1.11 +XTI = 4.385 +KF = 0 +AF = 1 +FC = 0.5 +BV = 1100 +IBV = 0.00025) .ENDS ***** BERKLEY 3C.X, 3D.X AND HSPICE(tm) SIMULATORS *************************** ************************** INSTANTIATION ********************************** .subckt mtp3n100eC 10 20 30 * * 10 = Drain 20 = Gate 30 = Source * ****************************************************************************** * *------------------------ EXTERNAL PARASITICS -------------------------------- * PACKAGE INDUCTANCE * LDRAIN 10 11 1e-09 LGATE 20 21 1e-09 LSOURCE 30 31 1e-09 * * RESISTANCES * RDRAIN1 4 11 3.4 RDRAIN RDRAIN2 4 5 0.01 RDRAIN RSOURCE 31 6 0.01508 RSOURCE RDBODY 8 30 0.01 RDBODY * RGATE 21 2 1 * *-------------------------------------------------------------------------- * *--------------- CAPACITANCES AND BODY DIODE ------------------------------ * DBODY 8 11 DBODY DGD 3 11 DGD CGDMAX 2 3 2.8e-09 RGDMAX 2 3 1e+08 CGS 2 6 1.188e-09 * *-------------------------------------------------------------------------- * *----------------------- CORE MOSFET -------------------------------------- * M1 5 2 6 6 MAIN * *-------------------------------------------------------------------------- * *.MODEL RDRAIN R ( *+TC1 = 0.008115 *+TC2 = 1.948e-05) * *.MODEL RSOURCE R ( *+TC1 = 0 *+TC2 = 0) * *.MODEL RDBODY R ( *+TC1 = 0 *+TC2 = 0) * * .MODEL MAIN NMOS ( +LEVEL = 3 +VTO = 3.8 +KP = 8 +GAMMA = 3 +PHI = 0.6 +LAMBDA = 0.0009889 +RD = 0 +RS = 0 +CBD = 0 +CBS = 0 +IS = 1e-14 +PB = 0.8 +CGSO = 0 +CGDO = 0 +CGBO = 0 +RSH = 0 +CJ = 0 +MJ = 0.5 +CJSW = 0 +MJSW = 0.33 +JS = 1e-14 +TOX = 1e-07 +NSUB = 1e+15 +NSS = 0 +NFS = 6.886e+11 +TPG = 1 +XJ = 0 +LD = 0 +UO = 600 +UCRIT = 10000 +UEXP = 0 +UTRA = 0 +VMAX = 1e+06 +NEFF = 1 +KF = 0 +AF = 1 +FC = 0.5 +DELTA = 0 +THETA = 0 +ETA = 0 +KAPPA = 0.2) * *-------------------------------------------------------------------------- * .MODEL DGD D ( +IS = 1e-15 +RS = 0 +N = 1000 +TT = 0 +CJO = 1.109e-09 +VJ = 1.55 +M = 0.9227 +EG = 1.11 +XTI = 3 +KF = 0 +AF = 1 +FC = 0.5 +BV = 10000 +IBV = 0.001) * *-------------------------------------------------------------------------- * .MODEL DBODY D ( +IS = 2.15e-10 +RS = 0.00743 +N = 1.23 +TT = 2.011e-07 +CJO = 5.809e-10 +VJ = 1.425 +M = 0.5887 +EG = 1.11 +XTI = 4.385 +KF = 0 +AF = 1 +FC = 0.5 +BV = 1100 +IBV = 0.00025) .ENDS ***** MICROSIM PSPICE(tm) SIMULATORS ***************************************** ************************** INSTANTIATION ********************************** .subckt mtp3n100eP 10 20 30 * * 10 = Drain 20 = Gate 30 = Source * ****************************************************************************** * *------------------------ EXTERNAL PARASITICS -------------------------------- * PACKAGE INDUCTANCE * LDRAIN 10 11 1e-09 LGATE 20 21 1e-09 LSOURCE 30 31 1e-09 * * RESISTANCES * RDRAIN1 4 11 RDRAIN 3.4 RDRAIN2 4 5 RDRAIN 0.01 RSOURCE 31 6 RSOURCE 0.01508 RDBODY 8 30 RDBODY 0.01 * RGATE 21 2 1 * *-------------------------------------------------------------------------- * *--------------- CAPACITANCES AND BODY DIODE ------------------------------ * DBODY 8 11 DBODY DGD 3 11 DGD CGDMAX 2 3 2.8e-09 RGDMAX 2 3 1e+08 CGS 2 6 1.188e-09 * *-------------------------------------------------------------------------- * *----------------------- CORE MOSFET -------------------------------------- * M1 5 2 6 6 MAIN * *-------------------------------------------------------------------------- * .MODEL RDRAIN RES ( +TC1 = 0.008115 +TC2 = 1.948e-05) * .MODEL RSOURCE RES ( +TC1 = 0 +TC2 = 0) * .MODEL RDBODY RES ( +TC1 = 0 +TC2 = 0) * * .MODEL MAIN NMOS ( +LEVEL = 3 +VTO = 3.8 +KP = 8 +GAMMA = 3 +PHI = 0.6 +LAMBDA = 0.0009889 +RD = 0 +RS = 0 +CBD = 0 +CBS = 0 +IS = 1e-14 +PB = 0.8 +CGSO = 0 +CGDO = 0 +CGBO = 0 +RSH = 0 +CJ = 0 +MJ = 0.5 +CJSW = 0 +MJSW = 0.33 +JS = 1e-14 +TOX = 1e-07 +NSUB = 1e+15 +NSS = 0 +NFS = 6.886e+11 +TPG = 1 +XJ = 0 +LD = 0 +UO = 600 +UCRIT = 10000 +UEXP = 0 +UTRA = 0 +VMAX = 1e+06 +NEFF = 1 +KF = 0 +AF = 1 +FC = 0.5 +DELTA = 0 +THETA = 0 +ETA = 0 +KAPPA = 0.2) * *-------------------------------------------------------------------------- * .MODEL DGD D ( +IS = 1e-15 +RS = 0 +N = 1000 +TT = 0 +CJO = 1.109e-09 +VJ = 1.55 +M = 0.9227 +EG = 1.11 +XTI = 3 +KF = 0 +AF = 1 +FC = 0.5 +BV = 10000 +IBV = 0.001) * *-------------------------------------------------------------------------- * .MODEL DBODY D ( +IS = 2.15e-10 +RS = 0.00743 +N = 1.23 +TT = 2.011e-07 +CJO = 5.809e-10 +VJ = 1.425 +M = 0.5887 +EG = 1.11 +XTI = 4.385 +KF = 0 +AF = 1 +FC = 0.5 +BV = 1100 +IBV = 0.00025) .ENDS