******************************************************************************************** * * * ################################################# * * # # * * # MTD3N25E BY MOTOROLA # * * # # * * # MODEL DEVELOPED BY # * * # ALLIANCE TECHNOLOGIES # * * # 10510 RESEARCH RD SE # * * # ALBUQUERQUE NM 87123 # * * # (505) 299-9591 # * * # 12-03-92 A. NUNEZ # * * # # * * ################################################# * * * ******************************************************************************************** * * THE MODEL FOR THIS DEVICE IS A SUBCIRCUIT AND CAN BE USED IN THE FOLLOWING FORMAT * IN ANY CIRCUIT SIMULATION: * X Nodes Model_Name * where X is the circuit specific name * Nodes are 3 for this device, the first is the drain, the second is the gate, and the third * is the source. * Model_Name is MTD3N25EX WHERE 'X' IS EITHER C, P, OR G FOR SPICE 3C.1 - 3E.2, PSPICE, * AND SPICE 2G.6 RESPECTIVELY * Example: X1 10 20 30 MTD3N25EC IS USED WITH SPICE 3C.1 COMPATIBALE SIMULATORS * .SUBCKT MTD3N25EC 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN ******************************************************************************************** * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 458.9E-03 RD RD2 4 5 458.9E-03 RD RS 3 9 147.5E-03 RS RG 1 8 17 LD 5 10 3.5E-29 LG 8 20 7.5E-29 LS 9 30 7.5E-29 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 32.29E-3 RDIO *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E10 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 0.29E-9 RCGD 4 7 1E10 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W=.81 L=1E-6 CGS 1 3 14E-12 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 3E15 VTO = 3.88 PHI = 0.6 + UO = 193.73 KAPPA = 0 ETA = 0 + THETA = 0.1758 NFS = 2.87E12 ) .MODEL DDS1 D ( IS = 2.036142E-12 + N = 1.0640402 BV = 250 IBV = 2.5E-4 + EG = 1.11 XTI = 4.915 TT = 615E-9 + CJO = 2.47E-10 VJ = 1.1612853 M = 0.5804441 + FC = 0.5 ) .MODEL DGD D ( CJO = 2.67E-10 + VJ = 1.410 M = 0.900 FC = 0.5 ) .MODEL RD R ( TC1 = 9.73122E-3 TC2 = 2.41728E-5 ) .MODEL RS R ( TC1 = -2.37284E-3 TC2 = 5.84772E-6 ) .MODEL RDIO R ( TC1 = 2.72851E-3 TC2 = 7.75201E-6 ) .ENDS ******************************************************************************************** ******************************************************************************************** .SUBCKT MTD3N25EP 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN ******************************************************************************************** * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 RD 458.9E-03 RD2 4 5 RD 458.9E-03 RS 3 9 RS 147.5E-03 RG 1 8 17 LD 5 10 3.5E-29 LG 8 20 7.5E-29 LS 9 30 7.5E-29 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 RDIO 32.29E-3 *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E10 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 0.29E-9 RCGD 4 7 1E10 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W=.81 L=1E-6 CGS 1 3 14E-12 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 3E15 VTO = 3.88 PHI = 0.6 + UO = 193.73 KAPPA = 0 ETA = 0 + THETA = 0.1758 NFS = 2.87E12 ) .MODEL DDS1 D ( IS = 2.036142E-12 + N = 1.0640402 BV = 250 IBV = 2.5E-4 + EG = 1.11 XTI = 4.915 TT = 615E-9 + CJO = 2.47E-10 VJ = 1.1612853 M = 0.5804441 + FC = 0.5 ) .MODEL DGD D ( CJO = 2.67E-10 + VJ = 1.410 M = 0.900 FC = 0.5 ) .MODEL RD RES ( TC1 = 9.73122E-3 TC2 = 2.41728E-5 ) .MODEL RS RES ( TC1 = -2.37284E-3 TC2 = 5.84772E-6 ) .MODEL RDIO RES ( TC1 = 2.72851E-3 TC2 = 7.75201E-6 ) .ENDS ******************************************************************************************** ******************************************************************************************** .SUBCKT MTD3N25EG 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN ******************************************************************************************** * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 458.9E-03 TC=9.73122E-3,2.41728E-5 RD2 4 5 458.9E-03 TC=9.73122E-3,2.41728E-5 RS 3 9 147.5E-03 TC=-2.37284E-3,5.84772E-6 RG 1 8 17 LD 5 10 3.5E-29 LG 8 20 7.5E-29 LS 9 30 7.5E-29 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 32.29E-3 TC=2.72851E-3,7.75201E-6 *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E10 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 0.29E-9 RCGD 4 7 1E10 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W=.81 L=1E-6 CGS 1 3 14E-12 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 3E15 VTO = 3.88 PHI = 0.6 + UO = 193.73 KAPPA = 0 ETA = 0 + THETA = 0.1758 NFS = 2.87E12 ) .MODEL DDS1 D ( IS = 2.036142E-12 + N = 1.0640402 BV = 250 IBV = 2.5E-4 + EG = 1.11 XTI = 4.915 TT = 615E-9 + CJO = 2.47E-10 VJ = 1.1612853 M = 0.5804441 + FC = 0.5 ) .MODEL DGD D ( CJO = 2.67E-10 + VJ = 1.410 M = 0.900 FC = 0.5 ) .ENDS