******************************************************************************************** * * * ################################################# * * # # * * # MTD2N50E BY MOTOROLA # * * # # * * # MODEL DEVELOPED BY # * * # ALLIANCE TECHNOLOGIES # * * # 10510 RESEARCH RD SE # * * # ALBUQUERQUE NM 87123 # * * # (505) 299-9591 # * * # 12-14-92 A. NUNEZ # * * # # * * ################################################# * * * ******************************************************************************************** * * THE MODEL FOR THIS DEVICE IS A SUBCIRCUIT AND CAN BE USED IN THE FOLLOWING FORMAT * IN ANY CIRCUIT SIMULATION: * X Nodes Model_Name * where X is the circuit specific name * Nodes are 3 for this device, the first is the drain, the second is the gate, and the third * is the source. * Model_Name is MTD2N50EX WHERE 'X' IS EITHER C, P, OR G FOR SPICE 3C.1 - 3E.2, PSPICE, * AND SPICE 2G.6 RESPECTIVELY * Example: X1 10 20 30 MTD2N50EC IS USED WITH SPICE 3C.1 COMPATIBALE SIMULATORS * .SUBCKT MTD2N50EC 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN ******************************************************************************************** * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 1.313 RD RD2 4 5 1.313 RD RS 3 9 73.40E-03 RS RG 1 8 7 LD 5 10 4.5E-9 LG 8 20 7.5E-9 LS 9 30 7.5E-9 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 34.00E-03 RDIO *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E10 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 0.33E-9 RCGD 4 7 1E10 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W= 1.014 L=1E-6 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 9E15 VTO = 4.1986288 PHI = 0.6 + UO = 81.765 KAPPA = 1E-3 ETA = 0 + THETA = 2E-3 NFS = 1.67E12 ) .MODEL DDS1 D ( IS = 4.9E-12 + N = 1.109 BV = 500 IBV = 2.4E-4 + EG = 1.11 XTI = 5.428 TT = 1.45e-6 + CJO = 2.3108E-10 VJ = 0.8063462 M = 0.5780846 + FC = 0.5 ) .MODEL DGD D ( CJO = 0.33E-9 + VJ = 0.450 M = 0.9000 FC = 0.5 ) .MODEL RD R ( TC1 = 9.37174E-3 TC2 = 2.84562E-5 ) .MODEL RS R ( TC1 = -3.31738E-3 TC2 = 5.09245E-5 ) .MODEL RDIO R ( TC1 = 3.12052E-3 TC2 = 7.86346E-6 ) .ENDS ******************************************************************************************** ******************************************************************************************** .SUBCKT MTD2N50EP 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN ******************************************************************************************** * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 RD 1.313 RD2 4 5 RD 1.313 RS 3 9 RS 73.40E-03 RG 1 8 7 LD 5 10 4.5E-9 LG 8 20 7.5E-9 LS 9 30 7.5E-9 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 RDIO 34.00E-03 *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E10 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 0.33E-9 RCGD 4 7 1E10 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W= 1.014 L=1E-6 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 9E15 VTO = 4.1986288 PHI = 0.6 + UO = 81.765 KAPPA = 1E-3 ETA = 0 + THETA = 2E-3 NFS = 1.67E12 ) .MODEL DDS1 D ( IS = 4.9E-12 + N = 1.109 BV = 500 IBV = 2.4E-4 + EG = 1.11 XTI = 5.428 TT = 1.45e-6 + CJO = 2.3108E-10 VJ = 0.8063462 M = 0.5780846 + FC = 0.5 ) .MODEL DGD D ( CJO = 0.33E-9 + VJ = 0.450 M = 0.9000 FC = 0.5 ) .MODEL RD RES ( TC1 = 9.37174E-3 TC2 = 2.84562E-5 ) .MODEL RS RES ( TC1 = -3.31738E-3 TC2 = 5.09245E-5 ) .MODEL RDIO RES ( TC1 = 3.12052E-3 TC2 = 7.86346E-6 ) .ENDS ******************************************************************************************** ******************************************************************************************** .SUBCKT MTD2N50EG 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN ******************************************************************************************** * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 1.313 TC=9.37174E-3,2.84562E-5 RD2 4 5 1.313 TC=9.37174E-3,2.84562E-5 RS 3 9 73.40E-03 TC=-3.31738E-3,5.09245E-5 RG 1 8 7 LD 5 10 4.5E-9 LG 8 20 7.5E-9 LS 9 30 7.5E-9 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 34.00E-03 TC=3.12052E-3,7.86346E-6 *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E10 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 0.33E-9 RCGD 4 7 1E10 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W= 1.014 L=1E-6 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 9E15 VTO = 4.1986288 PHI = 0.6 + UO = 81.765 KAPPA = 1E-3 ETA = 0 + THETA = 2E-3 NFS = 1.67E12 ) .MODEL DDS1 D ( IS = 4.9E-12 + N = 1.109 BV = 500 IBV = 2.4E-4 + EG = 1.11 XTI = 5.428 TT = 1.45e-6 + CJO = 2.3108E-10 VJ = 0.8063462 M = 0.5780846 + FC = 0.5 ) .MODEL DGD D ( CJO = 0.33E-9 + VJ = 0.450 M = 0.9000 FC = 0.5 ) .ENDS