******************************************************************************************** * * * ################################################# * * # # * * # MTB20N20E BY MOTOROLA # * * # # * * # MODEL DEVELOPED BY # * * # ALLIANCE TECHNOLOGIES # * * # 10510 RESEARCH RD SE # * * # ALBUQUERQUE NM 87123 # * * # (505) 299-9591 # * * # 11-25-92 J. DULIERE # * * # # * * ################################################# * * * ******************************************************************************************** * * THE MODEL FOR THIS DEVICE IS A SUBCIRCUIT AND CAN BE USED IN THE FOLLOWING FORMAT * IN ANY CIRCUIT SIMULATION: * X Nodes Model_Name * where X is the circuit specific name * Nodes are 3 for this device, the first is the drain, the second is the gate, and the third * is the source. * Model_Name is MTB20N20X WHERE 'X' IS EITHER C, P, OR G FOR SPICE 3C.1 - 3E.2, PSPICE, * AND SPICE 2G.6 RESPECTIVELY * Example: X1 10 20 30 MTB20N20C IS USED WITH SPICE 3C.1 COMPATIBALE SIMULATORS * .SUBCKT MTB20N20C 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN ******************************************************************************************** * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 54.25E-03 RD RD2 4 5 54.25E-03 RD RS 3 9 45.20E-03 RS RG 1 8 7.25 LD 5 10 3.5E-9 LG 8 20 7.5E-9 LS 9 30 7.5E-9 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 9.1E-03 RDIO *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E10 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 1.82E-9 RCGD 4 7 1E10 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W=5.36 L=1E-6 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 1.85E15 VTO = 4.472 PHI = 0.6 + UO = 690.9843806 KAPPA = 7.131283E-4 THETA = 6.680866E-3 + NFS = 2.5E12 ) .MODEL DDS1 D ( IS = 3.908008E-12 + N = 1.012433 BV = 200 IBV = 2.5E-4 + EG = 1.11 XTI = 3.497 TT = 753E-9 + CJO = 1.662516E-9 VJ = 0.7407019 M = 0.4736603 + FC = 0.5 ) .MODEL DGD D ( CJO = 1.70e-9 + VJ = 0.217 M = 0.692 FC = 0.5 ) .MODEL RD R ( TC1 = 7.6984E-4 TC2 = 5.43994E-6 ) .MODEL RS R ( TC1 = 9.64295E-3 TC2 = 2.3704E-5 ) .MODEL RDIO R ( TC1 = 2.06379E-3 TC2 = 6.53716E-7 ) .ENDS ******************************************************************************************** ******************************************************************************************** .SUBCKT MTB20N20P 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN ******************************************************************************************** * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 RD 54.25E-03 RD2 4 5 RD 54.25E-03 RS 3 9 RS 45.20E-03 RG 1 8 7.25 LD 5 10 3.5E-9 LG 8 20 7.5E-9 LS 9 30 7.5E-9 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 RDIO 9.1E-03 *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E10 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 1.82E-9 RCGD 4 7 1E10 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W=5.36 L=1E-6 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 1.85E15 VTO = 4.472 PHI = 0.6 + UO = 690.9843806 KAPPA = 7.131283E-4 THETA = 6.680866E-3 + NFS = 2.5E12 ) .MODEL DDS1 D ( IS = 3.908008E-12 + N = 1.012433 BV = 200 IBV = 2.5E-4 + EG = 1.11 XTI = 3.497 TT = 753E-9 + CJO = 1.662516E-9 VJ = 0.7407019 M = 0.4736603 + FC = 0.5 ) .MODEL DGD D ( CJO = 1.70e-9 + VJ = 0.217 M = 0.692 FC = 0.5 ) .MODEL RD RES ( TC1 = 7.6984E-4 TC2 = 5.43994E-6 ) .MODEL RS RES ( TC1 = 9.64295E-3 TC2 = 2.3704E-5 ) .MODEL RDIO RES ( TC1 = 2.06379E-3 TC2 = 6.53716E-7 ) .ENDS ******************************************************************************************** ******************************************************************************************** .SUBCKT MTB20N20G 10 20 30 * | | | * | | SOURCE * | GATE * DRAIN ******************************************************************************************** * * *------------------------------ EXTERNAL PARASITICS OF DEVICE -----------------------------* RD1 2 4 54.25E-03 TC=7.6984E-4,5.43994E-6 RD2 4 5 54.25E-03 TC=7.6984E-4,5.43994E-6 RS 3 9 45.20E-03 TC=9.64295E-3,2.3704E-5 RG 1 8 7.25 LD 5 10 3.5E-9 LG 8 20 7.5E-9 LS 9 30 7.5E-9 ******************************************************************************************** *---------------------------- END EXTERNAL PARASITICS OF DEVICE ---------------------------* ******************************************************************************************** ******************************************************************************************** * * *--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ---------------------* DDS 9 11 DDS1 RDIO 11 5 9.1E-03 TC=2.06379E-3,6.53716E-7 *-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT ------------------* * * ******************************************************************************************** ******************************************************************************************** * * *---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ----------------------------* *-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING -----------------* ******************************************************************************************** * VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT * * THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTROLLED * * SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL * ******************************************************************************************** * DGD 6 4 DGD RDGD 4 6 1E10 M2 6 4 1 100 MSW1 RSUB1 1 100 1E12 *----------------------------- LAST SECTION FOR CONSTANT CGD -----------------------------* CGDMAX 4 7 1.82E-9 RCGD 4 7 1E10 M3 7 4 1 101 MSW2 RSUB2 1 101 1E12 *---------------------------- END GATE CAPACITANCE SIMULATOR ------------------------------* * * ******************************************************************************************** ******************************************************************************************** * * *--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT -----------------------------* M1 2 1 3 9 MAIN W=5.36 L=1E-6 *------------------------------ END LEVEL THREE MOS MODEL ---------------------------------* * * ******************************************************************************************** *------------------------------ PARAMETER SETS FOR MODELS ---------------------------------* .MODEL MSW1 NMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MSW2 PMOS (LEVEL = 1 VTO = 0 KP = 1 ) .MODEL MAIN NMOS (LEVEL = 3 TOX = 1E-7 + NSUB = 1.85E15 VTO = 4.472 PHI = 0.6 + UO = 690.9843806 KAPPA = 7.131283E-4 THETA = 6.680866E-3 + NFS = 2.5E12 ) .MODEL DDS1 D ( IS = 3.908008E-12 + N = 1.012433 BV = 200 IBV = 2.5E-4 + EG = 1.11 XTI = 3.497 TT = 753E-9 + CJO = 1.662516E-9 VJ = 0.7407019 M = 0.4736603 + FC = 0.5 ) .MODEL DGD D ( CJO = 1.70e-9 + VJ = 0.217 M = 0.692 FC = 0.5 ) .ENDS _